He, Ke

Associate Professor

 

Department of Physics, Tsinghua University

D 304, School of Sciences Building

Beijing 100084, China

 

Phone:8610-62798466

Fax:8610-627811604

 

kehe@tsinghua.edu.cn 

Education and Employment
Education:  
Sept.1996 - Jul.2000 
B.S.in Physics    Dept. of Physics, Shandong University
 
Sept.2000 - Mar.2006
Ph.D. in Physics  Inst. of Physics, Chinese Academy of Sciences
 
Employment:
Apr.2006 - Mar.2007
Postdoc. Researcher Dept. of Physics, the Univ. of Tokyo
 
Apr.2007 - Mar.2009
Postdoc. Researcher Inst. for Solid State Physics, the Univ.of Tokyo
 
Apr.2009 - Sept.2013
Associate Professor Inst. of Physics, Chinese Academy of Sciences
 
Apr.2013 - Present
Associate Professor  Dept. of Physics, Tsinghua University
Teaching
 
Interests

Surface, Interface and Low-Dimensional Physics, Topological Insulator, Spintronics, Quantum Hall Effect-Related Phenomena, Molecular Beam Epitaxy, Angle-Resolved Photoemission Spectroscopy, Scanning Tunneling Microscopy

Awards and Membership
New Star Researcher of Institute of Physics, Chinese Academy of Sciences (2010)
Lu Jia-Xia Prize of Chinese Academy of Sciences for Young Scientists (2011)
Outstanding Science and Technology Achievement Prize of Chinese Academy of Sciences (2012)
Funded by National Science Foundation for Distinguished Young Scholars (2013)
Sir Martin Wood China Prize (2013)
Youth Science and Technology Award of China (2013)
主要论著
 (* indicates the corresponding author(s) of the paper)
1.       Chang, C.-Z.; Zhang, J.; Feng, X.; Shen, J.; Zhang, Z.; Guo, M.; Li, K.; Ou, Y.; Wei, P.; Wang, L.-L.; Ji, Z.-Q.; Feng, Y.; Ji, S.; Chen, X.; Jia, J.; Dai, X.; Fang, Z.; Zhang, S.-C.; He, K.*; Wang, Y.*; Lu, L.; Ma, X.-C.; Xue, Q.-K.*, Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator. Science 2013, 340 (6129), 167-170.
2.       He, K.*; Ma, X. -C.; Chen, X.; Lu, L.; Wang, Y. -Y.*; Xue, Q. -K.*, From magnetically doped topological insulator to the quantum anomalous Hall effect. Chinese Physics B 2013, 22 (6), 067305.
3.       Chang, C.-Z.; Zhang, J.; Liu, M.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Qi, X.-L.; Zhang, S.-C.; Wang, Y.*; He, K.*; Ma, X.-C.; Xue, Q.-K., Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order. Advanced Materials 2013, 25 (7), 1065-1070.
4.       Zhang, J.; Chang, C.-Z.; Tang, P.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-l.; Chen, X.; Liu, C.; Duan, W.; He, K.*; Xue, Q.-K.; Ma, X.; Wang, Y.*, Topology-Driven Magnetic Quantum Phase Transition in Topological Insulators. Science 2013, 339 (6127), 1582-1586.
5.       Zhang, Z.; Feng, X.; Guo, M.; Ou, Y.; Zhang, J.; Li, K.; Wang, L.; Chen, X.; Xue, Q.; Ma, X.; He, K.*; Wang, Y.*, Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures. Physica Status Solidi-Rapid Research Letters 2013, 7 (1-2), 142-144.
6.       Liu, M.; Zhang, J.; Chang, C.-Z.; Zhang, Z.; Feng, X.; Li, K.; He, K.*; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator. Physical Review Letters 2012, 108 (3), 036805.
7.       He, K.*, Topological insulator: Both two- and three-dimensional. Frontiers of Physics 2012, 7 (2), 148-149.
8.       Zhang, J.; Chang, C.-Z.; Zhang, Z.; Wen, J.; Feng, X.; Li, K.; Liu, M.; He, K.*; Wang, L.; Chen, X.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators. Nature Communications 2011, 2(12), 574.
9.       Song, C.-L.; Wang, Y.-L.; Cheng, P.; Jiang, Y.-P.; Li, W.; Zhang, T.; Li, Z.; He, K.; Wang, L.; Jia, J.-F.; Hung, H.-H.; Wu, C.; Ma, X.*; Chen, X.*; Xue, Q.-K., Direct Observation of Nodes and Twofold Symmetry in FeSe Superconductor. Science 2011, 332 (6036), 1410-1413.
10.       Liu, M.; Chang, C.-Z.; Zhang, Z.; Zhang, Y.; Ruan, W.; He, K.*; Wang, L.-l.; Chen, X.; Jia, J.-F.; Zhang, S.-C.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit. Physical Review B 2011, 83 (16), 165440.
11.       Zhang, Y.; He, K.*; Chang, C.-Z.; Song, C.-L.; Wang, L.-L.; Chen, X.; Jia, J.-F.; Fang, Z.; Dai, X.; Shan, W.-Y.; Shen, S.-Q.; Niu, Q.; Qi, X.-L.; Zhang, S.-C.; Ma, X.-C.; Xue, Q.-K.*, Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit. Nature Physics 2010, 6 (8), 584-588.
12.       He, K.; Takeichi, Y.; Ogawa, M.; Okuda, T.; Moras, P.; Topwal, D.; Harasawa, A.; Hirahara, T.; Carbone, C.; Kakizaki, A.; Matsuda, I.*, Direct Spectroscopic Evidence of Spin-Dependent Hybridization between Rashba-Split Surface States and Quantum-Well States. Physical Review Letters 2010, 104 (15), 156805.
13.       Zhang, Y.; Chang, C.-Z.; He, K.*; Wang, L.-L.; Chen, X.; Jia, J.-F.; Ma, X.-C.*; Xue, Q.-K., Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study. Applied Physics Letters 2010, 97 (19), 194102.
14.       Cheng, P.; Song, C.; Zhang, T.; Zhang, Y.; Wang, Y.; Jia, J.-F.; Wang, J.; Wang, Y.; Zhu, B.-F.; Chen, X.*; Ma, X.*; He, K.; Wang, L.; Dai, X.; Fang, Z.; Xie, X.; Qi, X.-L.; Liu, C.-X.; Zhang, S.-C.; Xue, Q.-K., Landau Quantization of Topological Surface States in Bi2Se3. Physical Review Letters 2010, 105 (7), 076801.
15.       Zhang, T.; Cheng, P.; Li, W.-J.; Sun, Y.-J.; Wang, G.; Zhu, X.-G.; He, K.; Wang, L.; Ma, X.; Chen, X.*; Wang, Y.; Liu, Y.; Lin, H.-Q.; Jia, J.-F.; Xue, Q.-K.*, Superconductivity in one-atomic-layer metal films grown on Si(111). Nature Physics 2010, 6 (2), 104-108.
16.       Zhang, T.; Cheng, P.; Chen, X.*; Jia, J.-F.; Ma, X.; He, K.; Wang, L.; Zhang, H.; Dai, X.; Fang, Z.; Xie, X.; Xue, Q.-K.*, Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry. Physical Review Letters 2009, 103 (26), 266803.
17.       He, K.*; Hirahara, T.; Okuda, T.; Hasegawa, S.; Kakizaki, A.; Matsuda, I., Spin polarization of quantum well states in Ag films induced by the Rashba effect at the surface. Physical Review Letters 2008, 101 (10), 107604.
18.       Ma, L.-Y.; Tang, L.; Guan, Z.-L.; He, K.; An, K.; Ma, X.-C.; Jia, J.-F.*; Xue, Q.-K.; Han, Y.; Huang, S.; Liu, F., Quantum size effect on adatom surface diffusion. Physical Review Letters2006, 97 (26), 266102.
19.       He, K.; Pan, M.; Wang, J.; Liu, H.; Jia, J.*; Xue, Q., Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface. Surface and Interface Analysis 2006, 38 (6), 1028-1033.
20.       He, K.; Ma, L. Y.; Ma, X. C.; Jia, J. F.; Xue, Q. K.*, Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001). Applied Physics Letters 2006, 88 (23), 232503.
21.       He, K.; Zhang, L.; Ma, X.; Jia, J.; Xue, Q.*; Qiu, Z., Growth and magnetism of ultrathin Fe films on Pt(100). Physical Review B 2005, 72 (15), 155432.