清华大学材料学院

                                       School of Materials Science and Engineering

潘 峰

博士,清华大学教授、博士生导师,国家“万人计划”科技创新领军人才,国家杰出青年科学基金获得者,国家创新人才推进计划重点领域创新团队负责人,全国优秀科技工作者。长期在新材料领域从事薄膜材料结构与性能调控技术、声表面波材料与器件、阻变存储材料与器件、磁性材料与自旋电子学等研究工作,获得四项国家级和八项省部级科研成果奖励。发表SCI论文280余篇,出版专著两部、教材一本,授权国家发明专利20余项,国际专利2项。
【联系方式】
实验室:技科楼3401(办公室),3402,3403,3404,3405,1405,1407,1409,1411.
电话:+86 10 6277 2907
传真:+86 10 6277 1160
E-mail: panf@mail.tsinghua.edu.cn

教育背景

1991.2-1993.9 清华大学材料科学与工程系博士研究生
1983.9-1986.1 北京航空材料研究所硕士研究生
1979.9-1983.8 中南工业大学材料系读本科

工作履历

1993.10 - 现在清华大学材料学院任副教授、教授(1996)、博士生导师(1998)
1998.10- 2010.1 清华大学先进材料教育部重点实验室主任
1998.1-2001.9 清华大学材料科学与工程系副主任
1997.3-2007.7 清华大学材料科学与工程研究院副院长
1986.2-1991.1 北京航空材料研究所任助理工程师、工程师、厂长等

学术兼职

“十三五”国家重点研发计划“重点基础材料技术提升与产业化”重点专项专家组长
“十二五”863新材料领域新型电子材料与器件主题专家组长
“十一五”863新材料领域专家
“十五”863新材料领域特种功能材料技术主题副组长
教育部高等学校材料科学与工程教学指导委员会委员(2007-2013),材料物理与化学分委员会委员(2013-)
北京市人民政府专家顾问团专家(2001-2012)
国际薄膜学会副理事长(2009-)
中国真空学会副理事长(2004-2013)、薄膜专业委员会主任委员(2004-  )
中国材料研究学会常务理事(2003-)、青年委员会主任(1999-2005)
中国晶体学会常务理事(2004- )
《航空材料学报》《真空科学与技术》《功能材料》《材料科学与工程》《表面工程》《Journal of Nanoscience Letters》等杂志编委

研究领域

1、薄膜材料结构与性能调控技术
2、声表面波材料与器件
3、阻变存储器材料与器件
4、自旋电子学材料与器件
5、离子束与材料相互作用

奖励与荣誉

2012年国家自然科学二等奖,氧化锌薄膜多功能化的结构与性能调控,第一获奖人
2009年国家科学技术进步奖,移动通讯用滤波器关键技术及产业化,第二获奖人
2007年国家技术发明二等奖,中高频声表面波关键材料及应用研究,第一获奖人
1999年国家自然科学三等奖,离子束材料改性中若干基础问题的研究,第五获奖人
另外获2011年度教育部自然科学一等奖,2006年北京市科学技术进步奖一等奖、1998年北京市科学技术进步奖一等奖,2004年中国真空学会真空科技成就奖等多项成果奖励

学术成果

代表性论文

1.  F. Pan, C. Song, X. J. Liu, Y. C. Yang, F. ZengFerromagnetism and possible application in spintronics of transition-metal-doped ZnO filmsMaterials Science and Engineering R: Reprots621),1-35(2008).ISI 热点论文[2009-2010]和高被引论文,“2008年中国百篇最具影响国际学术论文

2. F. Pan, S. Gao, C. Song, C. Chen, F. Zeng, Recent progress of resistive random access memories: materials, switching mechanisms, and performance, Materials Sciences and Engineering R: Reports, 83, 1-59, (2014). (ISI 热点论文[2015-]和高被引论文)

3. Y. C. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application, Nano Letters, 9, 1636-1642, (2009).Highlight by NGP Asia Materials, Non-volatile memory: Silver switches, Published online 15 June 2009(ISI 热点论文[2010-2011]和高被引论文)

4. G. Chen, C. Song, C. ChenS. GaoF. Zeng and F. Pan, Resistive Switching and magnetic Moudulation in Cobalt-doped ZnO, Advanced Materials, 243515-3520(2012). (入选Advanced Materials Top 40 for June 13, 2012) (ISI高被引论文)

5. F. Li, C. Song, Y. D. Gu, B. Cui, J. J. Peng, G. Y. Wang, F. Pan, Photon-gated spin transistor,             Advanced  Materials, 28,10.1002/adma.201604052R1(2016).

6. Y. Y. Wang , X. J. Zhou, C. Song, Y. N. Yan, S. M. Zhou, G. Y. Wang, C. Chen,                                     F. Zeng and F. Pan, Electrical control of the exchange spring in antiferromnetic metals, Advanced Materials, 273196-3201(2015).

7. B Cui, C Song, H. J. Mao, J. J. Peng,  F. Li, H. Q. Wu, G. Y. Wang, F. Zeng and F. Pan,         Magnetoelectric coupling induced by interfacial orbital reconstruction, Advanced Materials, 27, 6651-6657(2015).

8. J.H. Han, C. Song, S. Gao, Y. Y. Wang, C. Chen, and F. PanRealization of the Meminductor, ACS Nano, 8(10), 10043-10047, (2014).

9. Y. Y. Wang, C. Song, G. Y. Wang, J. H. Miao, F. Zeng and F. Pan, Anti-ferromagnet controlled tunneling magnetoresistance, Advanced Functional Materials, 24, 6806-6810, (2014).

10. B. CuiC. SongG. Y. WangY. N. YanJ. J. Peng , J. H. Miao, F. LiC. ChenF. Zeng and F. PanReversible ferromagnetic phase transition in electrode gated manganite, Advanced Functional Materials, 24,7233-7240,( 2014).

11. B. Cui, C. Song, et al, Electrical manipulation of orbital occupancy and magnetic anisotropy in manganites, Advanced Functional Materials,  25, 864-870,(2015). 

12. B. Cui, C. Song, F. Li, H. J. Mao, J. J. Peng, S. Gao, F. Zeng, and F. Pan, Manipulation of electric field effect by orbital switch, Advanced Functional Materials, 26, 753-759,(2016).

13. Y. Y. Wang, C. Song, B. Cui, G. Y. Wang, F. Zeng, and F. Pan, Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in antiferromagnet-based tunnel junction, Physical Review Letters, 109,137201, (2012).

14. Y. C. Yang, X. X. Zhang, M. Gao, F. Zeng, W. Y. Zhou, S. S. Xie, F. Pan, Nonvolatile resistive switching in single crystalline ZnO nanowires, Nanoscale, 3, 1917(2011).

15. C. Song, F. Zeng, Y. X. Shen, K. W. Geng, Y, N. XieZ. Y. Wu, F. Pan, Local Co structure and ferromagnetism in ion-implanted Co-doped LiNbO3, Physical Review B, 73, 172412(2006). (ISI高被引论文)

 

发表的主要论文

16. Y. N. Yan, C.H. Wan, X. J. Zhou, G.Y. Shi, B. Cui, J.J. Han, Y.H. Fan, X.F. Han, K. L. Wang, F. Pan and C. Song, Strong electrical manipulation of spin-orbit torque in ferromagnetic hetero structuresAdvanced Electronic Materials2 (10)1600219(2016).

17. B. Cui, F. Li, C. Song, J. J. Peng, M. S. Saleem, Y. D. Gu, S. N. Li, K. L. Wang, and F. Pan, Insight into the antiferromagnetic structure manipulated by electronic reconstruction,Physical Review B94, 134403(2016).

18. J. H. Han, G. Y. Shi, X. J. Zhou, Q. H. Yang, Y. H. Rao, G. Li, H. W. Zhang, F. Pan, and C. SongVertical spin Hall magneto resistance in Ta1-xPtx/YIG bilayers, Physical Review B94, 134406(2016). 

19. J.J.Peng, C. Song, M. Wang, F. Li, B. Cui, G. Y. Wang, P. Yu, F. Pan. Manipulating the metal-to-insulator transition of NdNiO3 films by orbital polarization. Physical Review B, 93(23),235102(2016).

20. F. Li, C. Song, Y. Y. Wang, B. Cui, H. J. Mao, J. J. Peng, S. N. Li, F. Pan. Optical control of magnetism in manganite films, Physical Review B , 93(2), 024406(2016).

21. M. Jiang, X. Z. Chen, X. J. Zhou, B. Cui, Y. N. Yan, H. Q. Wu, F. Pan, C. Song. Electrochemical control of the phase transition of ultrathin FeRh films, Applied Physics Letters, 108(20),208404(2016).

22. M. J. Wang, F. Zeng, S. Gao, C. Song, F. Pan. Multi-mode resistive switching behaviors induced by modifying Ti interlayer thickness and operation scheme, Journalof Alloys and Compounds, 667,219-224(2016).

23. X. J. Zhou, Y. N. Yan, M. Jiang, B. Cui, F, Pan, C. Song. Role of Oxygen Ion Migration in the Electrical Control of Magnetism in Pt/Co/Ni/HfO2 Films, Journal of Physical Chemistry C, 120(3), 1633-1639(2016).

24. C. T. Chang, F. Zeng, X. J. Li, W. S. Dong, S. H. Lu, S. Gao, F. Pan, Simulation of synaptic short-term plasticity using Ba(CF3SO3)(2)-doped polyethylene oxide electrolyte film, Scientific Reports, 6, 18915(2016).

25. F. Li, C, Song, Y. Y. Wang, B. Cui, H. J. Mao, J. J. Peng, S. N. Li, G. Y. Wang, F. Pan. Tilt engineering of exchange coupling at G-type SrMnO3/(La,Sr) MnO3 interfaces, Scientific Reports, 5, 16187(2015).

26. J. J. Peng, C. Song, B. Cui, F. Li, H. J. Mao, G. Y. Wang, F. Pan. Manipulation of orbital occupancy by ferroelectric polarization in LaNiO3/BaTiO3-delta hetero structures, Applied Physics Letters, 107(18), 182904(2015).

27. W. S. Dong, F. Zeng, S. H. Lu, A. Liu, X. J .Li, F. Pan. Frequency-dependent learning achieved using semiconducting polymer/electrolyte composite cells, Nanoscale, 7(40), 16880-16889(2015).

28. S. Gao, F. Zeng, M. J. Wang, G. Y. Wang, C. Song, F. Pan. Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch, Scientific Reports, 5, 15467(2015).

29. Y.N.Yan, X. J. Zhou, F. Li, B. Cui, Y. Y. Wang. G. Y. Wang, F. Pan, C. Song. Electrical control of Co/Ni magnetism adjacent to gate oxides with low oxygen ion mobility, Applied Physics Letters, 107(12), 122407(2015).

30. J. J. Peng, C. Song, F. Li, B. Cui, H. J. Mao, Y. Y. Wang, G. Y. Wang, F. Pan. Charge Transfer and Orbital Reconstruction in Strain-Engineered (La,Sr)MnO3/LaNiO3 Heterostructures, ACS Applied Materials & Interfaces, 7(32), 17700-17706(2015). 

31. S. Gao, F, Zeng, M. J. Wang, G. Y. Wang, C. Song, F, Pan. Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5-Ta system, Physical Chemistry Chemical Physics, 17(19), 12849-12856(2015).

32. S. Gao, F, Zeng, F. Li, M. J. Wang, H. J. Mao, G. Y. Wang, C, Song, F. Pan. Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application, Nanoscale, 7(14), 6031-6038(2015).

33. H. J. Mao, C. Song, L. R. Xiao, S. Gao, B. Cui, J. J. Peng, F. Li, F, Pan, Unconventional resistive switching behavior in ferroelectric tunnel junctions, Physical Chemistry Chemical Physics,17(15),10146-10150(2015).

34. W. S. Dong, F. Zeng, S. H. Lu, X. J. LiC. T. Chang, A. Liu, F. Pan, D. Guo. Effect of heavy-ion on frequency selectivity of semiconducting polymer/electrolyte hetero junction, Rsc Advances, 5(119), 98110-98117(2015).

35. Y. Y. Wang, C. Song, G. Y. Wang, F. Zeng, F. Pan. Evidence for asymmetric rotation of spins in antiferromagnetic exchange-spring, New Journal of Physics, 16, 123032(2014).

36. J. H. Han, C. Song, F. Li, Y. Y. Wang, G. Y. Wang, Q. H. Yang, F. Pan. Antiferromagnet-controlled spin current transport in SrMnO3/Pt hybrids, Physical  Review B, 90(14), 144431(2014).

37. B. Cui, C. Song, Y. Sun, Y. Y. Wang, Y. L. Zhao, F. Li, G. Y. Wang, F. Zeng, F. Pan. Exchange bias field induced symmetry-breaking of magnetization rotation in two-dimension, Applied Physics Letters, 105(15), 152402(2014).

38. F. Zeng, S. H. Lu, S. Z. Li, X. J. Li, F. Pan. Frequency Selectivity in Pulse Responses of Pt/Poly(3-exylthiophene-2,5-Diyl)/Polyethylene Oxide + Li + /Pt Hetero-Junction, Plos One,9(9), e108316(2014).

39. S. Gao, C. Chen, Z. Zhai, H. Y. Liu, Y. S. Lin, S. Z. Li, S. H. Lu, G. Y .Wang, C. Song, F. Zeng, F. Pan. Resistive switching and conductance quantization in Ag/SiO2/indium tin oxide resistive memories, Applied Physics Letters, 105(6), 063504(2014).

40. J. J. Peng, C. Song, B. Cui, F. Li, H. J. Mao, Y. Y. Wang, G. Y. Wang, F. Pan. Exchange bias in a single LaMnO3 film induced by vertical electronic phase separation, Physical Review B, 89(16), 165129(2014).

41. B. Cui, C. Song, F. Li, G. Y. Wang, H. J. Mao, J. J. Peng, F. Zeng, F, Pan. Tuning the entanglement between orbital reconstruction and charge transfer at a film surface, Scientific Reports, 4, 4206(2014).

42. J. T. Luo, P. X. Luo, M. Xie, K. Du, B. X. Zhao, F. Pan, P. Fan, F. Zeng, D. P. Zhang, Z. H. Zheng. A new type of glucose biosensor based on surface acoustic wave resonator using Mn-doped ZnO multilayer structure, Biosensors & Bioelectronics, 49, 512-518(2013).

43. Y. Y. Wang, C. Song, G. Y. Wang, F. Zeng, F. Pan. Insensitivity of tunneling anisotropic magnetoresistance to non-magnetic electrodes, Applied Physics Letters, 103(20), 202403(2013).  

44. B. Cui, C. Song, G. Y. Wang, H. J. Mao, F. Zeng, F. Pan. Strain engineering induced interfacial self-assembly and intrinsic exchange bias in a manganite perovskite film, Scientific Reports, 3, 2542(2013). 

45. S. Gao, F. Zeng, C. Chen, G. S. Tang, Y. S. Lin, Z. F. Zheng, C. Song, F. Pan. Conductance quantization in a Ag filament-based polymer resistive memory, Nanotechnology, 24(33), 335201(2013).

46. H. Y. Liu, F. Zeng, G. S.  Tang, G. Y. Wang, C. Song, F. Pan, Significant enhancement in electromigration resistance and texture of aluminum films using an ultrathin titanium underlayer, Acta Materialia, 61(12), 4619-4624(2013).

47. G. S. Tang, F. Zeng, C. Chen, H. Y. Liu, S. Gao, C. Song, Y. S. Lin, G. Chen, F. Pan, Programmable Complementary Resistive Switching Behaviours of Plasma-oxidised Titanium Oxide Nanolayer, NanoScale, 5, 422-428(2013).

48. C. Chen, S. Gao, G. S. Tang, H. D. Fu, G. Y. Wang, C. Song, F. Zeng, F. Pan, Effect of electrode materials on AlN-based bipolar and complementary resistive switching, ACS Applied Materials & Interfaces, 5(5), 1793-1799(2013).

49. S. Gao, C. Song, C. Chen, F. Zeng, F. Pan, Formation process of conducting filament in planar organic resistive memory, Applied Physics Letters, 102, 141606(2013).

50. H. Y. Liu, F. Zeng, Y. S. Lin, G. Y. Wang, F. PanCorrelation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin filmsApplied Physics Letters102, 181908(2013).

51. G. S. Tang F. Zeng, C. Chen, S. Gao, H. D. Fu, C. Song, G. Y. Wang, F. Pan, Resistive switching behaviour of a tantalum oxide nanolayer fabricated by plasma oxidation, Physica Status Solidi-Rapid Research Letters, 7(4), 282-284(2013).

52. Z. S. Wang, F. Zeng, J. Yang, C. Chen, F. Pan, Resistive Switching Induced by Metailic Fillaments Formation Through Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate), ACS Applied Materials and Interfaces, 4, 4447-453(2012).

53. S. Gao, C. Song, C. Chen, F. Zeng, F. Pan, Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices, Journal of Physical Chemstry C, 116, 17955-17959(2012).

54. C. Chen, C. Song, J. Yang, F. Zeng, F. Pan, Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure, Applied Physics Letters, 100, 253509(2012).

55. C. Song, Y. Y. Wang, X. J. Li, G. Y. Wang, F. Pan, Interlayer magnetostatic coupling  and linear magnetoresistance in [Pd/Co]/MgO/Co junction sensor, Applied Physics Letters, 101, 062404(2012).

56. D. C. Lin, C. Song, B. Cui, Y. Y. Wang, G. Y. Wang, F. PanGiant coercivity in perpendicularly magnetized cobalt monolayer, Applied Physics Letters,101, 112405(2012).

57. F. Pan, J. T. Luo, Y. C. Yang, X. B Wang, F Zeng, Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO, Science China Technological Sciences, 55,(2), 421-436(2012)

58. Y. C. Yang, F. Pan, F. Zeng, Bipolar resistance switching in high-performance Cu/ZnO:Mn/Pt nonvolatile memories: active region and influence of Joule heating, New Journal of Physics,12,023008(2010).

59. J. T. Luo, Y. C. Yang, X. Y. Zhu, G. Chen, F. Zeng, F. Pan, Enhanced electromechanical response by modulating Fe chemical state and ionic size in Fe-doped ZnO films, Physical Review B, 82, 014116(2010).

60. C. Chen, Y. C. Yang, F. Zeng, F. Pan, Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device, Applied Physics Letters, 97, 083502(2010).

61. Z. S. Wang, J. Yang, C. Chen, Y. C. Yang, F. Pan, Reproducible and controllable organic resistive memory based on Al/poly(3,4-ethylene-dioxythiophene):poly (styrenesulfonate)/Al structure, Applied Physics Letters, 97, 253301(2010).

62. F. Pan, C. Chen, Z. S. Wang, Y. C. Yang, J. Yang, F. Zeng, Nonvolatile resistive switching memories-characteristics, mechanisms and challenges, Progress in Natural Science -Materials International  , 20(1), 1-15(2010).

63. C. Song, C. Z. Wang, X. J. Liu, F. Zeng, F. Pan, Room temperature ferromagnetism in cobalt-doped LiNbO3 single crystalline films, Crystal Growth & Design, 9(2), 1235-1239( 2009).

64. P. Y. Yang, X. Y. Zhu, F. Zeng, F. Pan, Interlayer Magnetostatic Coupling Induced Co Layer Coercivity Enhancement and Exchange Bias in [Pd/Co]/Cu/Co Spin Valves, Applied Physics Letters, 95172512(2009).

65. G. Chen, F. Zeng, F. Pan, Enhanced spin injection and voltage bias in (Zn,Co)O/MgO/(Zn,Co)O magnetic tunnel junctions, Applied Physics Letters, 9595, 232508( 2009).

66. Y. C. Yang, C. Song, X. H. Wang, F. Zeng, F. Pan, Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films, Applied Physics Letters, 92, 012907(2008).

67. P. Y. Yang, C. Song, F. Zeng, F. PanTuning the training effect in exchange biased NiO/Ni bilayersApplied Physics Letters, 92, 243113(2008).

68. C. Song, C. Z. Wang, Y. C. Yang, X. J. Liu, F. Zeng, F. Pan, Room temperature ferromagnetism and ferroelectricity in Co-doped LiNbO3 film, Applied Physics Letters, 92262901(2008).

69. S. P. Wen, R. L. Zong, F. Zeng, Y. Gao, F. Pan, Evaluating modulus and hardness enhancement in evaporated Cu/W multilayers, Acta Materialia, 55, 345-351(2007).

70. Y. C. Yang, C. Song, F. Zeng, F. Pan, Y. N. Xie, T. Liu, V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films, Applied Physics Letters, 90, 242903(2007).

71. C. Song, X. J. Liu, F. Zeng, F. PanFully epitaxial (Zn,Co)O/ZnO/(Zn,Co)O junction and its tunnel magneto resistance, Applied Physics Letters, 91, 042106 (2007) .

72. C. Song, F. Zeng, K. W. Geng, X. J. Liu, F. Pan, Substrate-dependent magnetization in Co-doped ZnO insulating films, Physical Review B, 76, 045215 (2007).

73. C. Song, Y. C. Yang, X. W. Li, X. J. Liu, F. Zeng, F. Pan, Anomalous voltage dependence of tunnel magnetoresistance in (Zn,Co)O-based junction with double-barrier, Applied Physics Letters, 91,172109(2007).

74. C. Song, X. X. Wei, K. W. Geng, F. Zeng, F. Pan, Magnetic-moment enhancement and sharp positive magnetoresistance in Co/Ru multilayers, Physical Review B, 72, 184412(2005).

75. B. Zhao, G. H. Yang, F. Zeng, F. Pan, Irradiation induced alloying and formation of amorphous films in Co-Mo system during ion beam assisted deposition, Acta Materialia, 51(17), 5093-5099(2003).

76. F. Pan, M. Zhang, M. Ding, B. X. Liu, Y. M. Zhou, D. S. Wang, Metastable rhombohedral Fe phase formed in Fe-Sb multilayers and its magnetic property, Physical Review B, 59(17), 11458(1999).

77. F. Pan, Y. G. Chen, B.X.Liu, Spontaneous vitrification in Au-Ta system with small atomic size difference, Applied Physics Letters, 67(6), 780(1995).

78. B. X. Liu, F. Pan, Magnetic properties of vapor deposited iron noble metal multilayers, Physical Review B, 48, 10276(1993).

 

【授权发明专利】

 

【国际专利】

1. Magnetisch kodiertes Dünnfilmprodukt und Verfahren zu dessen Herstellung. 专利号:DE 112008000070,发明人:曹瑜,李晓伟,李新宇,潘峰,杨晶,曾飞。(德国专利)

2. Security functional thin film and security product containing the functional thin film.专利号:US 8257840发明人:李晓伟,李新宇,李策,杨晶,潘峰,李彩霞,曹瑜。(美国专利)

 

【国内专利】

1. 一种基于垂直交换耦合的磁场探测器及其制备和使用方法。专利号:ZL201410148982.9发明人宋成王钰言潘峰

2. 一种基于自旋霍尔磁电阻效应的忆阻器的实现方法。专利号:ZL201410264504.4发明人宋成,憨家豪,潘峰

3. 一种具有高可见光透过率和高压电常数的共掺杂ZnO薄膜。专利号:ZL201210004182.0发明人:曾飞,刘宏燕,杨晶,潘峰,罗景庭。

4. 一种可调控介质层磁性的阻变存储器。专利号:ZL201210186988.6发明人:宋成,潘峰,陈光,彭晶晶。

5. 一种CuCr合金触头材料及其制备方法。专利号:ZL201110412822.7,发明人:潘峰,王光月,曾飞。

6. 一种制备金属纳米条纹的方法。专利号:ZL201110168949.9发明人潘峰唐光盛曾飞

7. 一种具有室温铁磁性的铌酸锂薄膜及其制备方法。专利号:ZL201110170928.0发明人:曾飞;盛蓬,潘峰,唐光盛。

8. 一种ZnO基稀磁薄膜及其制备方法。专利号:ZL201110166520.6,发明人:潘峰,王钰言,曾飞,陈光。

9. 一种基于SOI材料的具有自整流效应的阻变存储器。专利号:ZL20110155407.8, 发明人:潘峰,陈超,曾飞,罗景庭,唐光盛。

10. 一种提高ZnO薄膜材料的压电常数的方法。专利号:ZL201010170458.3,发明人:潘峰,罗景庭,曾飞。

11. 一种非易失性阻变存储器结构及其制备方法。专利号:ZL200910081636.2,发明人:潘峰,杨玉超,曾飞。

12. 一种磁场调节中心频率的声表面波滤波器及其制备方法。专利号:ZL200810119667.8,发明人:曾飞,潘峰。

13. 具有大压电常数和高电阻率的ZnO薄膜。专利号:ZL200710118646.X,发明人:潘峰;王旭波;曾飞,杨玉超。

14. 磁性编码薄膜材料及其制备方法。专利号:ZL200710122027.8,发明人:李晓伟,曹瑜,杨琼,李新宇,曾飞,潘峰。

15. 一种防伪功能薄膜及包含该薄膜的防伪物。专利号:ZL200710122026.3,发明人:李晓伟,李新宇,李策,杨琼,潘峰,李彩霞,曹瑜。

16. 声表面波气传感器方法。专利号:ZL200710064333.0,发明人:李 强,李冬梅,潘 峰。

17. 一种防伪薄膜及其制作方法。专利号:ZL200710105777.4,发明人:李新宇,李晓伟,潘峰,曾飞,曹瑜,杨惊,彭榕。

18. 一种凹印版及其制作方法和真空沉积镀膜装置。专利号:ZL200710301411.4,发明人:刘永江,李晓伟,曾飞,潘峰,桂应琪,李万里。

19. 一种在柔性基材上沉积磁性薄膜的方法。专利号:ZL200710142929.8, 发明人:曹瑜,李新宇,潘峰,李晓伟。

20. 一种轴瓦表面过渡层、减摩层制备方法。专利号:ZL200510001076.7,发明人:曾飞,潘峰,李冬梅,文胜平。(国防专利)

21. 一种表面纳米晶化改性的方法。专利号:ZL200510011856.X,发明人:曾飞,潘峰,李冬梅,文胜平。

22. 具有抗电迁移的高频声表面波器件金属合金薄膜。专利号:ZL200510076884X, 发明人:潘峰,李冬梅,曾飞,王旭波。

23. 金刚石声表面波器件多层薄膜结构的制造方法。专利号:ZL200410096819.9, 发明人:潘峰,李冬梅,曾飞,王旭波。

24. 高频声表面波器件金属薄膜的制造方法。专利号:ZL200410097198.6,发明人:潘峰,李冬梅,王旭波,曾飞。

 

【专著】

Books/Chapters

1.潘峰,陈超,《阻变存储器材料与器件》,科学出版社,北京,2014. Pan Feng, Chen Chao.

Resistive Random Access Memory Materials and Devices(in Chinese), Science Press, Beijing, 2014.)

2.潘峰等,《声表面波材料与器件》,科学出版社,北京,2012. (Pan Feng et al, Materials and Devices of Surface Acoustic Wave(in Chinese), Science Press, Beijing, 2012)

3.C. Song and F. Pan, “Transition Metal-Doped Magnetic Oxides”(Chapter 7), in Semiconductors and Semimetals: Oxide SemiconductorsVolume 88. Eds: Bengt G. Svensson, Stephen J. Pearton and ChennupatiJagadish. Pages 227-259. Elsevier, 2013,

4. Guest Editors: Pan Feng and Chen Xu, Physics ProcediaVol.32, The 18th international Vacuum Congress (IVC-18), Elsevier, 2012.

5. Guest Editors: Pan Feng and OlindeConde, Thin Solid Films, Special Issue for The 18th international Vacuum Congress (IVC-18), Vol.520 Issue2, Elsevier, 2011.

6. Yang G H, Xu D, Pan F, Metastable phases and their effects on the magnetic properties in some Co-based multilayers, In: Trends in condensed matter physics ResearchEds: John V. Chang,. Pages 121-140. Hauppauge: Nova Science Publishers, New York, 2005.

 

【教材】

1. 潘峰,王英华,陈超,《X射线衍射技术》,化学工业出版社,北京,2016.10.

 

【研究组主要成员】:

副教授/副研究员:曾飞、宋成

工程师:王光月、王瑞

博士生:彭晶晶、李起、李凡、王小江、王敏涓、傅肃磊、Muhammad Shahrukh Saleem、陈贤哲、孙一鸣

 

【讲授课程】:

1.X-光衍射分析》(本科生专业基础课、清华大学精品课)

2.《新型功能材料专题》(研究生课)

 

【已毕业博士生和硕士生】:

博士生及其现工作单位:

曾飞,清华大学

赵斌,上海理工大学

杨国华,宝山钢铁集团

耿魁伟,华南理工大学

谷宇,太原钢铁集团

李冬梅,中科院微电子研究所

王旭波,国家开发银行

李晓伟,中国人民银行造币总公司

宋成,清华大学

文胜平,北京工业大学

刘雪静,中国人民银行造币总公司

宗瑞磊,中国石油化工集团公司

杨培勇,国家核电技术公司

杨玉超,北京大学

朱晓莹,装甲兵工程学院

罗景庭,深圳大学

陈光,北京神农投资管理股份有限公司

唐光盛,中国东方电气集团有限公司

陈超,中南大学

刘宏燕,中国航空工业集团公司

王钰言,北京航空航天大学

崔彬,德国马克思-普朗克研究所

高双,中国科学院宁波材料技术与工程研究所

 

硕士生:张明、张自淑、丁珉、李天舒、杨帆、李晖、贺汀、顾临、陈菁菁、冯爱玲、徐迪、丁宇清、魏晓雪、连江滨