Li Zhijian, Professor of Institute of Microelectronics, Member, Chinese Academy of Sciences. Born in Ningbo, Zhejiang Province in 1928. Graduated from the Department of Physics of Zhejiang University in 1951 and got his "Kogudart" degree from the University of Leningrad, USSR, in 1958. He has been working in Tsinghua University since 1958 and was Head of the Semiconductor Group of the Department of Electronics Engineering, and Director of the Institute of Microelectronics for years. Now he is the Vice Chairman of the University Academic Committee and Chairman of the Institute Academic Committee. He holds the following position outside Tssinghua University: Member of the Chinese National Association of Science and Technology, Vice President of the Chinese Institute of Electronics, Vice Chairman of the Chinese Semiconductor and Integrated Technology Association, Vice Chairmen of the Editorial Board of: Chinese Journal of Semiconductors and Member of the Editorial Board of Electronic Sinica. He is also a member of the Academic Committee of several National Laboratories, such as the Super Lattice Laboratory, the Surface Physics Laboratory, etc. His research field is silicon device physics and microelectronics technology. He has won twice the 2nd Rank National Awards for the Promotion of Progress of Science and Technology, and once the 2nd Rank National Award for Invention due to his work on "LSI Rapid Heat Processing". His works on VLSI technology and corresponding devices had won 4 times the 1st rank Awards for Promotion of Progress of Science and Technology of the Ministry and the National Commission Grade. His work on MOS Physics was won twice the 2nd rank above-mentioned Award of National Education Commission. He is the chief editor of two books and has published more than 130 scientific papers.